نوع مقاله : پژوهشی

نویسندگان

1 استاد، گروه فیزیک، دانشکده علوم، دانشگاه رازی، کرمانشاه، ایران.

2 دانشجوی دکتری، گروه فیزیک، دانشکده علوم، دانشگاه ملایر، ملایر، ایران.

چکیده

لایه‌های نازک سلنیدروی و سلنیدروی/مس با موفقیت به روش تبخیر خلاء تهیه شدند. با استفاده از طیف‌سنجی مرئی- فرابنقش خواص نوری آن‌ها بررسی شد. در ناحیه شفاف، نمونه لایه نازک سلنیدروی عبور بهتری نسبت به لایه نازک سلنیدروی/مس را از خود نشان داد. ضریب شکست نمونه سلنیدروی در طول موج‌های پایین به طول موج وابسته است اما در طول موج‌های بیشتر از 600 نانومتر بدون وابستگی به طول موج و دارای مقدار ثابت حدوداً 5/1 است. برای نمونه سلنیدروی/مس ضریب شکست وابستگی کمی به طول موج مشاهده می‌شود و تقریبا مقدار بین 5/1 تا 6/1 را دارد. ضریب خاموشی برای هر دو نمونه با افزایش طول موج، کاهش می‌یابد. قسمت حقیقی و موهومی ثابت دی الکتریک به ترتیب رفتاری مشابه ضریب شکست و ضریب خاموشی از خود نشان دادند. از این مطالعه می‌توان نتیجه گرفت که هر دو لایه نازک با چنین ویژگی‌های نوری برای کاربردهای اپتوالکترونیکی مناسب هستند. 

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