[1] M.V. Fischetti, W.G. Vandehberghe, Physics of electronic transport in two-dimensional materials for future FETs, IEEE International Electron Devices Meeting (IEDM) (2016) 14.2.1-14.2.4.
[2] K. Lee, Graphene and beyond: Electron transport in two dimensional materials, Thesis (2015).
[3] M.Y. Li, C.H. Chen, Y. Shi, L.J. Li, Heterostructures based on two-dimensional layered materials and their potential applications, Mater. Today 19 (2016) 322-335.
[4] M.O. Li, D. Esseni, J.J. Nahas, D. Jena, H.G. Xing, Two-dimensional heterojunction interlayer tunneling field effect transistors (Thin-TFETs), IEEE J. Electron Devices Soc. 3 (2015) 200-207.
[5] V.K. Sangwan, M.C. Hersam, Electronic transport in two-dimensional materials, Annu. Rev. Phys. Chem. 69 (2015) 299.
[6] J. Cao, A. Cresti, D. Esseni, M. Pala, Quantum simulation of a heterojunction vertica tunnel FET based on 2D transition metal dichalcogenides, Solid-State Electron. 116 (2016) 1-7.
[7] M.Y. Li, C.H. Chen, Y. Shi, L.J. Li, Heterostructures based on two-dimensional layered materials and their potential applications, Mater. Today 19 (2016) 322-335.
[8] A. Srivastava, M.S. Fahad, Vertical MoS2/hBN/MoS2 interlayer tunneling field effect transistor, Solid-State Electron. 126 (2016) 96.
[9] A. Shokri, N. Salami, Thermoelectric properties in monolayer MoS2 nanoribbons with Rashba spinorbit interaction, J. Mater. Sci. 54 (2019) 467-482.
[10] Y.H. Huang, R.S. Chen, J.R. Zhang, Y.S. Huang, Electronic transport in NbSe2 two-dimensional nanostructures Semiconducting characteristics and photoconductivity, Nanoscale 7 (2015) 45.
[11] J. Hong, C. Lee, J.S. Park, J.H. Shim, Control of valley degeneracy in MoS2 by layer thickness and electric field and its effect on thermoelectric properties electronic transport in Two-Dimensional materials, Phys. Rev. B 93 (2016) 035445.
[12] Q.-Y. Li, Q. Hao, T. Zhu, M. Zebarjadi, K. Takahashi, Nanostructured and Heterostructured 2D Materials for Thermoelectrics, Eng. sci. 13 (2021) 24-50.
[13] J. Cao, A. Cresti, D. Esseni, M. Pala, Quantum simulation of a heterojunction vertical tunnel FET based on 2D transition metal dichalcogenides, Solid-State Electron. 116 (2016) 1-7.
[14] A. Srivastava, M.S. Fahad, Vertical MoS2/hBN/MoS2 interlayer tunneling field effect transistor, Solid-State Electron. 126 (2016) 96.
[15] A. Nourbakhsh, A. Zubair, M.S. Dresselhaus, T. Palacios, Transport properties of a MoS2/WSe2 heterojunction transistor and its potential for application (Thin-TFETs), Nano Lett. 16 (2016) 1359-1366.
[16] X. Li, H. Zhu, Two-dimensional MoS : Properties, preparation, and applications, J. Mater. 1 (2015) 33-44.
[17] N. Salami ,A. Shokri, Geometrical effects on the thermoelectric properties of single/bilayer graphene junctions.
Journal of Research on Many-body Systems, Volume 10, Number 3, autumn 2020
10.22055/JRMBS.2020.16179
[18] Salami, N., Shokri, A. A., (2016), Electronic properties of MoS2 nanoribbons with disorder effects, Journal of Physics and Chemistry of Solids, 0022-3697
[20] Q.-Y. Li, Q. Hao, T. Zhu, M. Zebarjadi, K. Takahashi, Nanostructured and Heterostructured 2D Materials for Thermoelectrics, Eng. sci. 13 (2021) 24-50.
[21] A. Shokri, M. Esrafilian, N. Salami, Quantum transport of tunnel field effect transistors based on bilayer-graphene nanoribbon heterostructures, physica E 119 (2020) 113908.
)