نوع مقاله : پژوهشی

نویسنده

گروه فیزیک، واحد نورآباد ممسنی، دانشگاه آزاد اسلامی، نورآباد ممسنی، ایران

چکیده

با استفاده از نظریه تابعی چگالی پیش‌بینی شد که آلیاژ نیم هویسلر NbBiCs  می‌تواند کاندیدای بالقوه‌ای برای به ‌کار رفتن وسایل در وسایل اسپینترونیک و اپتوالکترونیک باشد. با استفاده از محاسبات اصول اولیه بر پایه نظریه تابعی چگالی (DFT) با تقریب‌ گرادیان شبه تعمیم یافته (GGA)، خواص الاستیک، مکانیکی، الکترونی، مغناطیسی و اپتیکی ترکیب نیم هویسلر NbBiCs در حالت انبوهه مطالعه شد. قطبش اسپینی در سطح فرمی برای ترکیب نیم هویسلر NbBiCs، اعداد 6/97% و 100% به ترتیب با استفاده تقریب‌های GGA و GGA+mBJ به‌دست آمده است. بخش حقیقی تابع دی الکتریک برای ترکیب NbBiCs در فاز  برای انرژی‌های بیشتر از 20 eV به عدد یک همگرا شده‌اند که نشان می‌دهد آن به عنوان یک عایق ایزوتروپیک رفتار می‌کند و همچنین ضریب شکست برای انرژی‌های بیشتر از eV 5/7 کمتر از عدد یک شده است که این معرف پدیده فوق‌العاده درخشان است.

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