نوع مقاله : پژوهشی
نویسندگان
1 پژوهشگاه علوم و فنون هسته ای
2 پژوهشکده فوتونیک و فناوریهای کوانتومی، پژوهشگاه علوم و فنون هستهای، تهران، ایران
چکیده
در این مقاله، به طراحی ساختار نوری موجبر نازکشده خطی معکوس ساخته شده از نیترید سیلیکون به عنوان متصلکننده موجبرهای چند میکرونی با موجبرهای چند دهم میکرونی در مدارهای مجتمع نوری پرداخته شده است. از آنجا که نحوه انتشار مدهای الکترومغناطیسی در ساختار موجبرها و به ویژه در موجبر نوری نازکشده، وابسته به عوامل مختلفی از جمله شکل و ابعاد و جنس موجبر میباشد، تاثیر جنبههای مختلف ساختار هندسی موجبر طراحی شده مورد تجزیه و تحلیل قرار میگیرد و توزیع فضایی میدان الکترومغناطیسی مدهای هدایتشده در این ساختار نیز بررسی میشود. با توجه به اهمیت میزان طیف عبوری در یک موجبر برای طراحی مدارهای مجتمع نوری در کامپیوترهای کوانتومی، این طیف با استفاده از محاسبات عددی با روش تفاضل محدود در حوزه زمان (FDTD) سهبعدی، شبیهسازی میشود و ساختار مناسب پیشنهادی با بازده بهتر از میان ساختارهایی تکمدی با ابعاد میکرونی، برای استفاده در کامپیوتر کوانتومی، ساختاری با طول μm 100 و پهنای خروجی μm 1 و پهنای ورودی μm 3/0 میباشد.
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