Investigating the Twisted Effect on Electronic Properties of Graphene and Boron- Nitride Bilayers Nanostructures

Ashkesh, Azadeh; Shokri, Aliasghar

doi:10.30473/jphys.2019.42641.1073

Document Type : Research

Authors

Azadeh Ashkesh ¹
Aliasghar Shokri ²

¹ M.A., Department of Physics, Payame Noor University

² Professor, Department of Physics, Payame Noor University

https://doi.org/10.30473/jphys.2019.42641.1073

Abstract

In this paper, the electrical properties of graphene and boron nitride are studied. The effect of the layers on each other and also the twisting of the layers on each other were studied. The presence of an additional layer creates additional levels, which, in the case of graphene, maintains the conductivity of the material, but reduces its mobility dramatically. The curvature of graphene and boron nitride increases the number of energy strips to eight. Increasing the bending angle leads to the movement of the point of attachment of the conduction edges and also to the movement of the capacity of the graphene to the center of the region of the brillouin. . In the case of boron nitride, the curvature transfers the band gap to the center of the brillouin region. This transmission increases with increasing the angles of twisting.

Keywords

20.1001.1.27831752.1399.3.1.6.6

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Quarterly Journal of Optoelectronic

Investigating the Twisted Effect on Electronic Properties of Graphene and Boron- Nitride Bilayers Nanostructures

References

References

Volume 3, Issue 1 - Serial Number 8
February 2021
Pages 51-58

Investigating the Twisted Effect on Electronic Properties of Graphene and Boron- Nitride Bilayers Nanostructures

References

References

Volume 3, Issue 1 - Serial Number 8February 2021Pages 51-58

Volume 3, Issue 1 - Serial Number 8
February 2021
Pages 51-58