Document Type : Research

Authors

1 Department of Physics, Alzahra University, Tehran, Iran.

2 null

Abstract

Two-dimensionam transition-metal dichalcogenides (TMDC) layers with direct bandgaps have made a new horizon for application in photonics and electroptics. The presence of bandgap causes a significant absorption useful in photovoltaic devices. When these layers are located on a substrate that leads to a frequent optical reflection thus affect the absorption. Typically, SiO2 or Si or their combination as a substrate is used for these monolayers. In this paper, we used a transfer matrix method to study the absorption spectra of TMDC monolayers including MoSe2, WSe2, MoS2 and WS2 with the presence of SiO2/ Si substrate with different thicknesses of SiO2 layer. We found that using the SiO2 layer with a thickness of 90 nm in SiO2/ Si substrate does not change the general behavior of absorption and increases the absorption in some regions of the wavelength range.

Keywords

[1]  Seyler KL, Schaibley JR, Gong P, Rivera P, Jones A, Wu S, Yan J, Mandrus D, Yao W, Xu X. Electrical control of second-harmonic generation in a WSe2 monolayer transistor. Nature nanotechnology. 2015; 10(5): 407-11.
[2]  Noori Y, Cao Y, Roberts J, Woodhead C, Bernardo-Gavito R, Tovee P, Young R. Photonic crystals for enhanced light extraction from 2D materials. ACS Photonics. 2016; 3(12): 2515-2520.
[3]  Yu Y, Hu S, Su L, Huang L, Liu Y, Jin Z, Purezky A, Geohegan D, Kim K, Zhang Y, Cao L. Equally efficient interlayer exciton relaxation and improved absorption in epitaxial and nonepitaxial MoS2/WS2 heterostructures. Nano letters. 2015; 15(1): 486-91.
[4]  Li X, Han W, Wu J, Qiao X, Zhang J, Tan P. Layer-number dependent optical properties of 2D materials and their application for thickness determination. Advanced Functional Materials. 2017; 27(19): 1604468.
[5]  Li Y, Chernikov A, Zhang X, Rigosi A, Hill H, Zande A, Chenet D, Shih E, Hone J, Heinz T. Measurement of the optical dielectric function of monolayer transition-metal dichalcogenides: MoS2, MoSe2, WS2, and WSe2. Physical Review B. 2014; 90(20): 205422.
[6]  Ansari N, Ghorbani F. Light absorption optimization in two-dimensional transition metal dichalcogenides van der Waals heterostructures. JOSA B. 2018; 35(5): 1179-85.
[7]  Ansari N, Moradi M. Optical absorption in air/monolayer MoS2/S (S=SiO2 or Si) trilayer stacks at oblique incidence. Superlattices and Microstructures. 2017; 104: 104-11.
[8]  Zhao P, Kiriya D, Azcatl A, Zhang C, Tosun M, Liu YS, Hettick M, Kang JS, McDonnell S, KC S, Guo J. Air stable p-doping of WSe2 by covalent functionalization. ASC nano. 2014; 8(10): 10808-14.
[9]  Lien DH, Kang JS, Amani M, Chen K, Tosun M, Wang HP, Roy T, Eggleston MS, Wu MC, Dubey M, Lee SC. Engineering light outcoupling in 2D materials. Nano letters. 2015; 15(2): 1356-61.
[10]             Zeng J, Li J, Li H, Dai Q, Tie Sh, Lan Sh. Effects of substrates on the nonlinear optical responses of two-dimensional materials. Optics express. 2015; 23(25): 31817-27.
[11]             Zhan T, Shi X, Dai Y, Liu X, Zi J. Transfer matrix method for optics in Graphene layers. Journal of Physics: Condensed Matter. 2013; 25(21): 215301.
[12]             Green M, Keevers M. Optical peroperties of intrinsic silicon at 300 K. Progress in Photovoltaics: Research and Applications. 1995; 3: 189-192.
[13]             Ghosh G. Dispersion-equation coefficients for the reflective index and birefringence of calcite and quartz crystals. Optics communications. 1999; 163(1-3): 95-102.
[14]             Chen K, Wan X, Xu J. Epitaxial stitching and stacking growth of atomically thin transition-metal dichalcogenides (TMDCs) heterojunctions. Advanced Functional Materials. 2017; 27(19): 1603884.
[15]             Wang R, Chien H, Kumar J, Kumar N,. Chiu H and Zhao H. Third-harmonic generation in ultrathin films of MoS2. ACS applied materials & interfaces. 2013; 6(1): 314-8.
Kumar N, Najmaei S, Cui Q, Ceballos F, Ajayan P, Lou J, Zhao H. Second harmonic microscopy of monolayer MoS2. Physical Review B. 2013; 87(16): 161403.