Document Type : Research
Authors
Abstract
In this article, optic properties of AlInGaN compounds such as real and imaginary part of dielectric function, optical conductivity, refractive index and extinction index have been investigated. Calculation have performed using Full Potential Linear Approximation Plane Wave method inDensity Functional Theory framework by WIEN2K package.
Finally, the optical properties of these compounds were examined which confirmed the results of the electronic and band structures. We also noticed that the VBM of these alloys is higher than the GaN in the fixed band gap. So it is expected that these alloys are doped much easier than P-type semiconductors.
Keywords
[1] C.A.M. Fabien, B.P. Gunning, J.J. Merola, E.A. Clinton, and W. A. Doolittle, “Large-area III-nitride double-heterojunction solar cells with record-high in-content InGaN absorbing layers,” in Photovoltaic Specialist Conference (PVSC), 2015 IEEE 42nd, 2015, pp. 1–3.
[2] Y.-H. Cho, “(Invited) Nitride Semiconductor Quantum Structures for Novel Nanophotonic Devices,” in PRiME 2016/230th ECS Meeting (October 2-7, 2016), 2016.
[3] J. Zhang and N. Tansu, “Optical gain and laser characteristics of InGaN quantum wells on ternary InGaN substrates,” IEEE Photonics J., vol. 5, no. 2, p. 2600111, 2013.
[4] D.F. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Semipolar InGaN/GaN light-emitting diodes for high-efficiency solid-state lighting,” J. Disp. Technol., vol. 9, no. 4, pp. 190–198, 2013.
[5] Y.J. Hwang, C.H. Wu, C. Hahn, H.E. Jeong, and P. Yang, “Si/InGaN core /shell hierarchical nanowire arrays and their photoelectrochemical properties,” Nano Lett., vol. 12, no. 3, pp. 1678–1682, 2012.
[6] Y.V Kuznetsova, V.N. Jmerik, D.V Nechaev, A.M. Kuznetsov, and M.V Zamoryanskaya, “Specific features of the cathodoluminescence spectra of AlInGaN QWs, caused by the influence of phase separation and internal electric fields,” Semiconductors, vol. 50, no. 7, pp. 904–909, 2016.
[7] P.Y.B. and T.B. and M.F.R. and F.C. and M.F. and R. Goldhahn, “Electroreflectance characterization of AlInGaN/GaN high-electron mobility heterostructures,” Semicond. Sci. Technol., vol. 30, no. 8, p. 85014, 2015.
[8] F. Wang, S.S. Li, J.B. Xia, H.X. Jiang, J.Y. Lin, J. Li, and S.H. Wei, “Effects of the wave function localization in AlInGaN quaternary alloys,” Appl. Phys. Lett., vol. 91, no. 6, p. 061125, 2007.
[9] N. H. A. Raof, S. S. Ng, H. A. Hassan, Z. Hassan, M. Rusop, and T. Soga, “The Study of Energy Band Gap of In[sub x]Al[sub y]Ga[sub 1−x−y]N Quaternary Alloys using UV-VIS Spectroscopy,” in AIP Conference Proceedings, 2009, pp. 176–180.
[10] G. Madsen, P. Blaha, K. Schwarz, E. Sjöstedt, and L. Nordström, “Efficient linearization of the augmented plane-wave method,” Phys. Rev. B, vol. 64, no. 19, p. 195134, Oct. 2001.
[11] D.D. Koelling and G.O. Arbman, “Use of energy derivative of the radial solution in an augmented plane wave method: application to copper,” J. Phys. F Met. Phys., vol. 5, no. 11, pp. 2041–2054, Nov. 1975.
[12] E. Hecht, “Optics, 4th,” Int. Ed. Addison-Wesley, San Fr., vol. 3, 2002.
)