Document Type : Research
Authors
Department of Modern Sciences and Technologies, Urmia University of Technology, Urmia
Abstract
Infrared light detection technologies have attracted increasing attention due to their wide applications in security, military identification, medical diagnosis, and industrial manufacturing. This paper reviews the fundamental principles of optical detection of IR detectors. Recent advances in two-dimensional materials, especially graphene and hexagonal boron nitride, offer great potential for improving the performance of detectors due to their unique properties such as high carrier mobility, strong light-matter interaction, and low fabrication costs. We investigate the effect of temperature and voltage on the chaotic behavior of graphene systems by analyzing the changes in quantum parameters and show that increasing temperature and voltage can lead to significant changes in the dynamic properties and stability of the system. The results show that p-type graphene exhibits stronger chaotic behavior than n-type graphene, and these effects are visible at certain temperatures (310, 340 K). Current-voltage diagrams were also drawn to confirm the results. This study emphasizes the importance of thermal management and stability under different environmental conditions for optimal performance of photodetectors. It contributes to the development of new technologies in the field of infrared detection. The results can guide the design and optimization of IR photodetectors in practical applications.
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