Document Type : Research

Authors

• Roya Attarzadeh ¹
• Mohsen Hatami ²
• Mohammad Mahmoudi ¹

¹ Department of Physics, University of Zanjan, P.O.BOX: 45371-38791, Zanjan, Iran

² Department of Physics, Shiraz University of Technology, Shiraz, Iran.

Abstract

In this paper, the dispersion properties and Raman nonlinearity of three-layer metal–insulator–metal (MIM) plasmonic waveguides are systematically investigated. The proposed structure, composed of two gold layers and a silicon nitride core, offers low optical loss, a broad transparency window, and full CMOS compatibility, making it a promising platform for integrated photonics. Using numerical techniques, the first- to fourth-order dispersion coefficients are extracted, revealing that the zero second-order dispersion wavelength is highly sensitive to the metal–insulator separation.

Owing to the pronounced electromagnetic field confinement inside the dielectric core, the waveguide enables efficient nonlinear interactions, including supercontinuum generation near the zero-dispersion regime. In addition, the wavelength-dependent Raman nonlinear coefficients are evaluated. At 1.55µm, the Raman coefficients are found to be up to 42 times larger than those of standard silica fibers, highlighting the strong potential of the proposed waveguide for integrated nonlinear photonic devices and ultrafast optical signal processing.

Keywords

• Dispersion
• Raman Nonlinear Coefficients
• Silicon-Nitride
• Plasmonic Waveguides