Document Type : Research
Authors
Physics Department/ Faculty of Sciences/Malayer/University/Malayer/Iran
Abstract
The present study is dedicated to a detailed investigation of the effect of Al- doping on the properties of thin films of CuSe nanostructures during the deposition process. In this regard, CuSe nanostructures with different concentrations of Al impurity (equivalent to 0.03 and 0.05 M) were synthesized using a simple chemical bath deposition(CBD) method. The results show that the introduction of aluminum atoms into the CuSe structure leads to the formation of new electronic transitions that are attributed to the AlSe phase. This phenomenon leads to the appearance of multiple energy gaps in the doped samples. To analyze and identify the properties of the samples, absorption spectroscopy was used to calculate the energy band gap, as well as EDAX and FESEM techniques for elemental and surface analysis. Observations indicate that in many samples, the existence of two distinct transitions can be distinguished, which belong to the intrinsic band gaps of CuSe and the band gap due to the presence of the AlSe phase, respectively. Therefore, it is essential to employ an accurate and practical approach to determine the band gap energy that does not depend on initial assumptions about the structure of the semiconductor material. In this study, the Tauc model was selected and used as an efficient and valid tool for this purpose.
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