Document Type : Research
Authors
1 Department of Physics, Ahv.C., Islamic Azad University, Ahvaz, Iran
2 Advanced Surface Engineering and Nani Materials Research Center, Department of Physics, Ahv.C., Islamic Azad University, Ahvaz, Iran
Abstract
This study presents a numerical simulation of the simultaneous effects of electric field orientation and intense laser radiation on the Stark shift phenomenon in intra-band transitions of a heterostructured quantum well with a GaAs/Ga₀.₅₅Al₀.₄₅As quasi-V-shaped potential. The numerical solution of the Schrödinger equation was performed within the framework of the effective oscillatory potential and the effective mass approximation, and the system's behavior under electric fields with different polarizations (F_z=±25 kV/cm) and various laser field amplitudes (α_0) was analyzed. The findings indicate that the laser field alters the potential configuration by creating a gap in the lower part of the well, changing it from a single-well to an asymmetric double-well configuration. This change is accompanied by a reduction in the effective depth and an increase in the effective width of the potential well, resulting in an increase in the number of bound states and a reduction in level spacings. The results related to the application of the electric field showed that the sign and magnitude of the Stark shift are sensitively dependent on the field direction, such that the inversion of the field direction leads to the inversion of the shift sign in all energy levels. Furthermore, the laser field strength, as an active control parameter, has a determining effect on the magnitude and sensitivity of this shift. These observations prove the existence of a controllable tripartite interaction between the heterogeneous well geometry, the electric field, and the laser field, which can be utilized for engineering optoelectronic properties in nanodevices.
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