Document Type : Research

Author

. Department of Basic Sciences, Garmsar Branch, Islamic Azad University, Garmsar, Iran

10.30473/jphys.2025.73114.1227

Abstract

This study systematically analyzed a lead-free perovskite solar cell based on Cs₂PtI₆ (Cesium Platinum Iodide) using the Solar Cell Capacitance Simulator (SCAPS-1D). The investigation focused on the effects of perovskite layer thickness, operating temperature, and defect density on key photovoltaic parameters, including the short-circuit current density, open-circuit voltage, fill factor, power conversion efficiency, and quantum efficiency. The model structure was utilized as a proposed n-i-p device architecture comprising ITO/TiO₂/Cs₂PtI₆/CBTS/Au.

The results indicate that optimizing the perovskite layer thickness, provided it does not exceed the charge carrier penetration depth, can increase the efficiency by up to 29.2%. Conversely, increasing the operating temperature by approximately 110 K results in a 10.7% efficiency reduction. Furthermore, a significant decline in efficiency (36.8%) was observed due to defect-induced recombination within the perovskite layer. These findings highlight the importance of material optimization and operational stability in the design of efficient, lead-free perovskite solar cells.

Keywords