Document Type : Research
Author
Department of Physics, University of Farhangian, Tehran 1998963341, Iran
Abstract
In this work, pristine and Ni-doped ZnO nanopods were deposited on silicon substrate by pulsed-laser deposition (PLD) machine. The morphogical, optical and electricl properties of Ni-doped ZnO nanopod films were examined using various techniques. SEM images of the surface of the samples showed that the nanorods grew in a randomly oriented manner on the substrate. The optical study conducted to investigate the transmittance (T), band gap (Eg) and photoluminace of Ni doped ZnO. An increase in the band gap from 3.18 to 3.26 electron volts, as well as an increase in light transmission, observed in the diagram of nickel-doped zinc oxide.
Photoluminescence (PL) spectroscopy measurements carried out to study the defects in grown thin films. The spectrum exhibited two characteristic emission peaks around 410 and 482 nm, which may be due to oxygen vacancy. Additionally, defects such as oxygen vacancies are observable based on the peaks in the Raman spectrum. In the conductivity vs. temperature graph, for temperatures above 300 degrees Celsius, there is a significant increase in conductivity and charge carriers.
The results indicate that Ni doping enhanced the optical charactteristics of the ZnO thin film and would be suitable candidates for optoelectric applictions
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