Document Type : Research
Author
Department of Physics, University of Farhangian, Tehran 1998963341, Iran
Abstract
A B S T R A C T
In this work, undoped and Ni-doped ZnO nanopods were deposited on silicon substrate by pulsed-laser deposition (PLD) machine. The morphogical, optical and electricl properties of Ni-doped ZnO nanopods films were examined by utilizing various techniques. SEM images of the surface of the samples showed that the randomly oriented nanorods were grown on the substrate. The optical study was carried out to investigate the transmittance (T), band gap (Eg) and photoluminace of Ni doped ZnO. An increase in transmittance and band gap was observed after Ni doping. The optical band gap increaed slightly from 3.18 to 3.26 eV after adding Ni particle. The spectrum exhibited two characteristic emission peaks around 410 and 482 nm. Photoluminescence (PL) spectroscopy measurements are carried out to study the defects in grown thin films.
The results indicate that Ni doping enhanced the optical charactteristics of the ZnO thin film and would be suitable candidates for optoelectric applictions
Keywords
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