Document Type : Research
Authors
1 Department of Physics، Faculty of Science، Azarbaijan Shahid Madani University، Tabriz, Iran
2 Department of Physics، Faculty of Science,، Azarbaijan Shahid Madani University، Tabriz, Iran
Abstract
The transmission spectrum and faraday rotation of a magnetophotonic crystal structure with symmetric arrangment of (AB)m InAs (BA)m are investigated using the 4×4 transfer matrix method. A, B layers are the common dielectric materials and InAs anisotropic semiconductor acts as the defect layer. In the photonic band gap of the structure, two defect mode are appeared with faraday rotation in the same frequency region of the defect modes. In this paper, it is shown that by changing structural parameters, number of periodicity and defect layer thickness, it is possible to design a structure to enhance the faraday rotation with a relavity high transmission. The effect of the external parameters, magnetic field intensity and incident angle, on enhancing the faraday rotation and transmission are studied and optimized. The highest faraday rotation with relatively high transmission achieved in this work occur in 20o incident angle is -44.23o . The results show that frequency location of the defect modes in the transmission spectrum and faraday rotation depend on incident field direction and the defect layer thickness but are independent of the changes of the magnetic field and the number of the structure period.
Keywords
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