Document Type : Research

Authors

1 PhD student

2 Shiraz University

3 Payam nor Shiraz

Abstract

sources, among which, semiconductor quantum dots are particularly attractive thereby quantum dots embedded in semi-conductor nanowires. Quantum dots with different energy levels and wave functions which leeds the absorption and emission of different photons, can have various applications. In this article, firstly, the electronic properties of two indium arsenide quantum dots located symmetrically at the center of galium arsenide quantum wire were investigated. This is done by numerically solving the Schrodinger equation, using Comsol software and the finite element method. The energy eigenvalues, and eigenfunctions were calculated and compared with other similar works. The main research here is solving and using the self-consistent Poisson-Schrödinger equation for the various nanostructures. Then, by using the self-consistent Poisson-Schrödinger equation, the effect of impurities on the electronic properties of the quantum nano wire and the structure of the two quantum spheres inside the quantum wire has been obtained. These results are compared with the results of solving the Schrödinger equation in limiting conditions. The obtained results indicate that the effect of impurities are significant, while the effect of temperature from low temperatures to ambient temperature is insignificant, but the effect of changes in internal radii and the amount of contaminated impurity on the electronic properties of the nanostructure is significant and can be calculated.

Keywords

 
[1] P. Harrison, A. Valavanis, Quantum wells, wires and dots: theoretical and computational physics of semiconductor nanostructures, John Wiley & Sons 2016.
[2] G. Safarpour, M. Barati, M. Vahdani, Electron–hole transition energy for a spherical quantum dot confined in a nano-cylindrical wire, Physica E: Low-dimensional Systems and Nanostructures, 44. 2011, 728-732.
[3] J.C. Martínez-Orozco, M.E. Mora-Ramos, C.A. Duque, Nonlinear optical rectification and second and third harmonic generation in GaAs δ-FET systems under hydrostatic pressure, Journal of luminescence, 132. 2012, 449-456.
[4] I. Karabulut, M. Mora-Ramos, C. Duque, Nonlinear optical rectification and optical absorption in GaAs–Ga1–xAlxAs asymmetric double quantum wells: Combined effects of applied electric and magnetic fields and hydrostatic pressure, Journal of Luminescence, 131. 2011, 1502-1509.
[5] H. Dakhlaoui, S. Almansour, E. Algrafy, Effect of Si δ-doped layer position on optical absorption in GaAs quantum well under hydrostatic pressure, Superlattices and Microstructures, 77. 2015, 196-208.
[6] E.C. Niculescu, N. Eseanu, A. Radu, Heterointerface effects on the nonlinear optical rectification in a laser-dressed graded quantum well, Optics Communications, 294. 2013, 276-282.
[7] E. Kasapoglu, C. Duque, H. Sari, I. Sökmen, Intense laser field effects on the linear and nonlinear intersubband optical properties of a semi-parabolic quantum well, The European Physical Journal B, 82. 2011, 13-17.
[8] G. Safarpour, M. Izadi, M. Novzari, S. Yazdanpanahi, Anisotropy effect on the linear and nonlinear optical properties of a lased dressed donor impurity in a GaAs/GaAlAs nanowire superlattice, Superlattices and Microstructures, 75. 2014, 936-947.
[9] G. Safarpour, M. Izadi, M. Novzari, E. Niknam, M. Moradi, Anisotropy effect on the nonlinear optical properties of a three-dimensional quantum dot confined at the center of a cylindrical nano-wire, Physica E: Low-dimensional Systems and Nanostructures, 59. 2014, 124-132.
[10] G. Safarpour, M. Izadi, E. Niknam, M. Moradi, M. Golshan, Simultaneous effects of external electric field and aluminum concentration on the binding energy of a laser-dressed donor impurity in a spherical quantum dot confined at the center of a cylindrical nano-wire, Physica B: Condensed Matter, 436. 2014, 14-19.
[11] M. Moradi, M. Moradi, The Effects of Temperature and Electric Field on the Electronic and Optical Properties of an InAs Quantum Dot Placed at the Center of a GaAs Nanowire, Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques, 16. 2022, 1237-1247.
[12] M. Jaouane, A. Sali, A. Ezzarfi, A. Fakkahi, R. Arraoui, Study of hydrostatic pressure, electric and magnetic fields effects on the donor binding energy in multilayer cylindrical quantum dots, Physica E: Low-dimensional Systems and Nanostructures, 127. 2021, 114543.
[13] M. Chubrei, V. Holovatsky, C. Duque, Effect of magnetic field on donor impurity-related photoionisation cross-section in multilayered quantum dot, Philosophical Magazine, 101. 2021, 2614-2633.
[14] J.A. Gil-Corrales, J.A. Vinasco, A. Radu, R.L. Restrepo, A.L. Morales, M.E. Mora-Ramos, C.A. Duque, Self-consistent schrödinger-poisson study of electronic properties of gaas quantum well wires with various cross-sectional shapes, Nanomaterials, 11. 2021, 1219.
[15] M. Jaouane, A. Sali, A. Fakkahi, R. Arraoui, F. Ungan, The effects of temperature and pressure on the optical properties of a donor impurity in. In, Ga, N/GaN multilayer cylindrical quantum dots, Micro and Nanostructures, 16. 2022, 107146.
[16] S. Uslu, Z. Yarar, Self consistent solution of Schrödinger Poisson equations and some electronic properties of ZnMgO/ZnO hetero structures, AIP Conference Proceedings, 1815. 2017, 050017.
[17] I. Bouneb, F. Kerrour, Nanometric modelization of gas structure, multidimensional using comsol software, International Journal of Electrical and Computer Engineering, 8. 2018, 2014.
[18] M. Moradi, M. Moradi, S. Elahi, S. Parhizgar, Electronic and Optical Properties of Quantum Dot Surrounded by Doped Cylindrical Nanowire, Acta Physica Polonica, A., 138. 2020,561-569.
[19] M. Califano, P. Harrison, Presentation and experimental validation of a single-band, constant-potential model for self-assembled InAs/GaAs quantum dots, Physical Review B, 61. 2000, 10959.